Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa
Measuring the piezoresistance in p-type silicon up to 3GPa, we found it to decrease with compressive stress beyond the predicted saturation. This result has potential implications for the Si technology roadmap.
Collaboration with Ecole Polytechnique Palaiseau and IEMN. Article featured in EE Times News&Analysis.
Authors
J. S. Milne, I. Favorskiy, A. C. H. Rowe, S. Arscott, and Ch. Renner
Published in
Phys. Rev. Lett. 108, 256801 (2012)
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